ID39084W

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID39084W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 4100 MHz.The ID39084W delivers 84 W of saturated power at 48V with a drain efficiency of 64% at Psat, 3.9 GHz.The ID39084W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
Doherty Amplifier
5G NR Systems

제품 사양

Max Freq. 4100MHz
Typ Output Power 3W
Saturation Power 84W
Power Gain 18dB
Efficiency 14.3%
VDC 48
Package RF12002KR3
Package Type Flange
Min Freq2. 3700MHz