통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ID39084W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 4100 MHz.The ID39084W delivers 84 W of saturated power at 48V with a drain efficiency of 64% at Psat, 3.9 GHz.The ID39084W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product SpecificationMax Freq. | 4100MHz |
---|---|
Typ Output Power | 3W |
Saturation Power | 84W |
Power Gain | 18dB |
Efficiency | 14.3% |
VDC | 48 |
Package | RF12002KR3 |
Package Type | Flange |
Min Freq2. | 3700MHz |