Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID20411D

ID20411D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID20411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 2200 MHz and provides a saturated power of 410 W . The ID20411D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2200MHz
Typ Output Power 56.2W
Saturation Power 410W
Power Gain 16dB
Efficiency 48.1%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 1930MHz

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