통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz.The ID18411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.
View Product SpecificationMax Freq. | 1880MHz |
---|---|
Typ Output Power | 56.2W |
Saturation Power | 410W |
Power Gain | 18dB |
Efficiency | 54% |
VDC | 48 |
Package | RF24008DKR3 |
Package Type | Flange |
Min Freq2. | 1800MHz |