ID18411D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz.The ID18411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 1880MHz
Typ Output Power 56.2W
Saturation Power 410W
Power Gain 18dB
Efficiency 54%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 1800MHz