Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID41411DR

ID41411DR

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID41411DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 4100 MHz.The ID41411DR delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 4100MHz
Typ Output Power 56.2W
Saturation Power 410W
Power Gain 14.2dB
Efficiency 46.1%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 3700MHz

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