Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID26411D

ID26411D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID26411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2570 to 2620 MHz.The ID26411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
Doherty Amplifier

제품 사양

Max Freq. 2620MHz
Typ Output Power 60W
Saturation Power 410W
Power Gain 15.2dB
Efficiency 51.1%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 2570MHz

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