Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID22601D

ID22601D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID22601D is a discrete gallium nitride on silicon carbide (GaN-onSiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz.Delivering 530 W of saturated power at 48V, the ID22601D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.

View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2200MHz
Typ Output Power 76W
Saturation Power 530W
Power Gain 15.1dB
Efficiency 47%
VDC 48
Package RF24009DKR3
Package Type Flange
Min Freq2. 2110MHz

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