Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID20275WD

ID20275WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID20275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz. The ID20275WD delivers 282 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.

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WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2025MHz
Typ Output Power 48W
Saturation Power 282W
Power Gain 15.3dB
Efficiency 53%
VDC 48
Package RF18010DKR3
Package Type Flange
Min Freq2. 1880MHz

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