Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID25275WD

ID25275WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID25275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) operable from 2520 to 2630 MHz. The ID25275WD delivers 316 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.

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WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2630MHz
Typ Output Power 40W
Saturation Power 316W
Power Gain 14.4dB
Efficiency 50%
VDC 48
Package RF18010DKR3
Package Type Flange
Min Freq2. 2520MHz

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