통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ET43014P is a 14W gallium-nitride on silicon carbide (GaN-on-SiC) drive transistor designed ideally for microwave heating/drying and medical and plasma lighting applications. Operable from DC to 6000 MHz, the ET43014P provides a high gain of 15.5 dB with a 64% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product SpecificationMax Freq. | 6000MHz |
---|---|
Output Power | 14W |
Power Gain | 15.5dB |
Drain Efficiency | 68.2% |
VDC | 50 |
Package Type | Flange |