Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RF Energy
The world runs on power, and we see a future where the world can do much more with less with RFHIC's gallium nitride (GaN) solid state microwave solutions
Defense & Aerospace
Elevate the performance of your Defense & Aerospace systems with RFHIC's field-proven gallium nitride (GaN) solid-state RF & Microwave devices
Company
RFHIC is a global leader in providing radio frequency (RF) & microwave (MW) solutions utilizing gallium nitride (GaN) for wireless infrastructure, commercial and military radar, and RF energy applications
MWJ Executive Interview : RFHIC’s Co-Founder and CTO, Samuel Cho
Microwave Journal had the opportunity to interview our Co-Founder and CTO, Samuel Cho for their latest July 2020 Feature.
What motivated you to start RFHIC in 1999? What was your vision for the company?
RFHIC Corporation, which stands for Radio Frequency Hybrid Integrated Circuit, was founded in 1999 with our cofounder and CEO, David Cho. The motivation all started with an incurable need for cost-effective GaAs components for satellite applications within South Korea. After developing mainly GaAs components, we dove in to developing and manufacturing GaN for telco applications, due to its exceptional performance features.
Our vision for the company is the same as 20 years ago, which is to provide our customers with excellent quality and cost-effective RF and microwave components worldwide.
Discuss the evolution of your products, from the initial focus on the telecom market to high-power amplifiers using GaN technology.
Our initial focus mainly targeted the commercial telecommunications market, especially base stations. After successfully commercializing our GaN on SiC for telco, we expanded towards the defense sector, targeting high-powered radar systems utilizing our high-powered GaN SSPAs. After multiple successful defense and commercial radar projects, we established name value overseas with top global defense contractors, like Raytheon, Lockheed Martin, Northrop Grumman, L3Harris and so much more.
We now have expanded our product portfolio in designing and manufacturing high-powered subsystems for various high-powered industrial, scientific and medical (ISM) applications. With this capability, we can provide our customers with a customizable, one-stop GaN solution — from transistor to system level — lowering costs and getting our customers’ products to market faster.
Describe your technology and manufacturing capabilities for semiconductors, assembly and test. How do these differentiate RFHIC?
RFHIC Corporation is the first and only GaN device to subsystems solution provider in the world, providing our customers with customizable, cost-effective and fast GaN solutions for telco, defense and ISM applications.
Our headquarters facility, located in Anyang, South Korea, is equipped with a grade 4 clean room production facility that is capable of supporting die attach, wire bonding, packaging, chip-on-board, SMT, RF testing, power amplifier assembly, subsystem assembly and ISO-certified quality testing.
I think our biggest differentiator from other suppliers is that we are a fabless company. Being fabless allows us to experiment and utilize different technologies and materials best suited for our customers. It also allows us to allocate our resources more towards R&D, sales and marketing, enabling us to reach a wider audience.
You were an early advocate of GaN. What led you to believe in the technology?
We were able to experiment with various materials like GaAs, LDMOS, GaN on Si and GaN on SiC from the beginning, allowing us to get a clear understanding of what compound semiconductor material was the best fit for us to maintain competitiveness. As technology rapidly progressed, we foresaw at an early stage that conventional materials like GaAs and LDMOS would not be capable of efficiently performing at those higher power and frequency levels.
Being the underdogs within the RF/microwave industry, we tend always to look 10, 20 steps ahead of technology to differentiate ourselves from our competitors. We felt GaN on SiC was the future. GaN is a wide-bandgap semiconductor material that can sustain high breakdown fields and high saturation velocity compared to other conventional semiconductor materials like silicon or GaAs. SiC exhibits exceptional thermal characteristics, allowing the heat to be dissipated in a faster and efficient manner in a much smaller form factor.
In 2017, you purchased the GaN on diamond IP from E6 and announced a GaN on diamond transistor at the 2019 IMS in Boston. Discuss your process for forming the GaN epi on diamond and the maturity of GaN on diamond.
We have reached a stage where GaN is the new “it” compound material and is becoming more widely used among the RF/microwave industry. But I also see within three to four years, GaN on SiC running into physical limitations for higher power applications within the defense and ISM industry, which is what led us to developing the GaN on diamond transistor.
Diamond has five times the thermal conductivity of SiC, allowing GaN devices to operate at much higher power levels while maintaining stable temperatures, significantly improving reliability and performance.
RFHIC’s GaN on diamond epi process starts by taking a GaN epitaxial wafer and attaching a temp carrier on top to protect the GaN surface. Once the temp carrier is attached, the substrate and buffer layer will be removed using various etching processes. Once the substrate is removed completely, diamond seed layers are applied. Utilizing a chemical vapor deposition process, polycrystalline diamond is grown on the backside of the epitaxial wafer. Once the diamond is directly deposited, the backside of the diamond substrate goes through a polishing process to enhance the mechanical properties of the epitaxial wafer. Finally, the temp carrier is removed to create a GaN on diamond epitaxial wafer ready for foundry processing.
We have successfully been able to produce samples for our customers and are currently in the process of fine tuning our technology, which we expect to have within the next couple of years.
How do you compare the performance of your GaN on SiC products with those offered by other suppliers?
Although we purchase our GaN on SiC wafers from a foundry source, we perform all packaging measures in house. Back in 2017, we acquired Metallife, a Korean company that specializes in hermetic packages for RF/microwave applications. Through this acquisition, we were able to significantly lower our material costs while providing our customers with high quality products.
We also spearhead our foundry partners to optimize their solutions for our specific customers’ needs, such as higher power, gain and efficiency in the 5G spectrum and other applications.
Unlike your GaN transistor competitors, you have moved up the food chain to develop kilowatt transmitters for radar and industrial applications. Has this been a successful strategy?
Comparative to our large conglomerate competitors, we are still considered an SME (small- and medium-sized enterprise). To maintain competitiveness, we believe it is in our best interest to expand our product portfolio further towards high-powered subsystems to target next-generation radar and ISM applications.
Gaining early traction in major markets is crucial for radar and ISM equipment makers, since they tend to keep their relations with existing suppliers once they have integrated a new system. I believe by being the first company in the world to provide GaN device to multi-kW subsystems gives us a significant first-mover advantage, allowing us to establish a dominant position within the high-powered RF/microwave industry, as well as the flexibility in creating the standards for this industry.
I also think our customers welcome our efforts providing higher integration solutions, as this adds more value and helps our customers focus more on the bigger picture, getting their end products to market faster for their end customers.
What are the leading markets and geographies you currently serve?
We focus on three key industries: wireless infrastructure for telecommunications, power amplifiers and high-power subsystems for military/commercial radars and ISM applications. Currently, our telecom business captures a substantial portion of our revenue, but we do foresee our defense and RF energy business expanding significantly within the next couple of years.
We have a very global and diverse customer portfolio, spread across North America, Europe and Asia.
What markets and applications are driving growth? Do you plan to address mmWave applications?
5G is the key market and application driving our growth. In addition, many radar applications for military and commercial gained momentum in recent years, where much of our R&D work has translated into mass production.
We see significant increases in growth especially within RF energy, due to the wide transition of tube-based systems over to solid-state technology for various high-powered applications.
We believe the mmWave market is considered a very niche market and will be for some time. I think the action is going to be in that sub-6 GHz range for the initial 5G market. With that said, this does not mean we do not plan to serve mmWave applications. If we start to see a wider adoption on the infrastructure side for mmWave, we are certainly poised to support that in the future.
What has been the most satisfying moment during your time at RFHIC?
Recently, I was able to witness a commercial satellite fly off into space, utilizing RFHIC’s GaN components. This moment truly epitomized the ever-expanding roles of GaN technology and the promising future it holds in creating a more connected and better world.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
4kW & 5kW GaN Pulsed Transmitters for C and X-band
Anyang, South Korea, June 10, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, featured their latest 4kW and 5kW GaN solid-state pulsed transmitters operable at C-band and X-band frequencies in Microwave Journal’s 2020 Aerospace & Defense Supplement feature. These exceptional transmitters utilize RFHIC’s GaN power devices in a redundant power amplifier (PA) architecture, which provides long lifetimes with “soft” failure. The systems are cooled using forced air.
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-megawatts of power, from DC~40 GHz.
If you have any questions please fill out the form below and our sales representative will be in contact with you shortly.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
550W GaN SiC Power Transistor (IE13550D) for Particle Accelerator Applications
Anyang, South Korea, June, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest 550W, CW GaN SiC power transistor operating at 1.295 GHz to 1.305 GHz (IE13550D). This transistor is designed for CO2 lasers, particle accelerator, plasma, radiation oncology, LINAC, and so much more. The IE13550D achieves an exceptional drain efficiency of 80%, a power gain of 15dB with lower power dissipation. This device is internally matched and has a compact size of 20.6 x 9.8 x 3.77 mm. This compact device provides excellent thermal stability and reliability resulting in longer meantime and exceptional performance.
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-megawatts of power.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Anyang, South Korea, May 21, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest GaN wideband power amplifier series ideally designed for electronic warfare and jamming applications. Providing unmatched dynamic performance and range for next-generation EW applications. RFHIC’s latest RWP-Series is operable at 2 GHz to 6 GHz, fully matched with power levels up to 200W. The solid-state power amplifiers (SSPA) are fabricated with RFHIC’s cutting edge GaN on SiC HEMT providing industry-leading size, weight, and cost (SWaP-C).
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-kW of power.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Everything RF’s Executive Interview with RFHIC’s Co-Founder and CTO, Samuel Cho
Anyang, South Korea, April 14th, 2020 – Everything RF recently had a chance to interview RFHIC’s Co-Founder and current Chief Technical Officer (CTO), Samuel Cho. Based in South Korea, RFHIC is a leading developer of RF & Microwave components with a comprehensive product portfolio from discrete to integrated high-power Sub-Systems, utilizing the most sophisticated technologies, including hybrid solutions of GaN and GaAs.
Mr. Samuel Cho has been involved in developing RF and microwave components and systems for over 30 years. He holds a BE degree from Kwangwoon University, a ME degree from Yonsei University, and a Ph.D. in RF and Microwave Engineering.
Q. Can you give us a brief history of RFHIC? When was the company founded, and what was the objective behind it?
Samuel Cho:RFHIC Corporation, which stands for Radio Frequency Hybrid Integrated Circuit, was founded in 1999. It started with an incurable need for cost-effective GaAs components for satellite applications within South Korea. In the beginning, RFHIC developed mainly using GaAs components but also saw the vast potential of GaN technology, which led us to develop and provide GaN-on-SiC solutions commercially for telecommunications back in 2004.
After successfully commercializing GaN on SiC for telecommunications, we diversified our telecom customer profile and expanded into the defense sector. After multiple successful defense and commercial radar projects, we established name value domestically and overseas with top global defense contractors. We recently entered the RF energy market, targeting high-power industrial, scientific, and medical applications. With the expansion of our product portfolio, we have become the world’s first and only GaN device-to-systems manufacturer.
Q. What products and solutions does RFHIC develop? How has your product portfolio evolved?
Samuel Cho:RFHIC is the world’s first and only GaN device-to-systems solution provider. Offering customers a “one-stop-solution for GaN SiC transistors, GaN SSPAs, and high power GaN solid-state sub-systems for telecommunications, radar, EW, and RF Energy applications. Our initial product portfolio consisted mainly of GaAs, GaN transistors, and power amplifiers for telecommunications and defense. Over time, we expanded our focus segments and broadened further upstream by expanding our product portfolio to the sub-system or microwave generator level. Doing so provides our customers with turnkey manufacturing, streamlined communications, better product fit, and, most importantly, significant cost savings.
Q. Are you a fabless company? Which Fabs do you work with?
Samuel Cho:Yes, we are a fabless company, and I think it is one of our key advantages for providing our customers with cost-effective, high-quality, and fast products. Being a fabless company allows us to experiment and utilize different technologies and materials more suited for our customers. Also, being fabless enables us to allocate our financial resources more towards R&D and Sales allowing us to go broader and deeper into our core products. Wolfspeed is one of our several GaN wafer suppliers and others in multiple geographical locations for risk mitigation purposes and competitive supply chain strategies.
Q. What about GaN Technology made you decide to focus on this technology most?
Samuel Cho:As I mentioned earlier, RFHIC started developments with GaAs and LDMOS. Still, we foresaw the benefits of GaN technology, which led us to migrate towards GaN- specifically GaN on SiC technology. GaN is a wideband gap (WBG) semiconductor material that can sustain a high breakdown field and high saturation velocity than conventional semiconductors like silicon or GaAs. It also exhibits exceptional thermal characteristics by efficiently dissipating heat through high thermal conductivity SiC substrates.
But I see GaN on SiC running into physical limitations within the next 3-4 years for higher power applications, which is why we have been developing GaN on Diamond, RFHIC’s next-generation semiconductor material. Diamond has five times the thermal conductivity of SiC, allowing GaN devices to operate much cooler significantly, enhancing reliability or driving it harder to produce two times more power from the same size device. This technology will allow devices to operate at much higher power levels and frequencies without hindering the form factor and enable future developments in radar, Satcom, and various industrial applications.
Q. How has GaN technology evolved over time? What applications do you feel are best suited to this technology?
Samuel Cho:GaN technology was a university research topic ten-twenty years ago. Over the last decade, it has significantly improved in performance, cost, and reliability due to mass adaptions in various applications, not just for LED. I believe GaN technology is best suited for all semiconductor applications, from switches to even CPUs. However, if I am specific to GaN on SiC technology, it is best suited for high-power RF & MW applications, especially for 5G, Radar, EW, and RF Energy.
Q. Do you also develop amplifiers based on LDMOS technology? What is your view on GaN vs. LDMOS technology for wireless infrastructure amplifiers?
Samuel Cho:We started with conventional semiconductors like GaAs and LDMOS, so we have a lot of RF & MW expertise on both compounds. But we foresaw that there would be a massive shift in technology within the RF & MW industry, especially for high-power products leading us to pursue the development of GaN SiC solutions. Currently, we solely develop GaN on SiC transistors and power amplifiers for wireless infrastructure applications. With the deployment of 5G, efficient high-power systems with small form factors are critical. With GaN’s key performance features, I believe it will continue to replace conventional semiconductors like LDMOS and GaAs for various applications. As the price decreases, we expect it to gain massive adoption from all industries.
Q. What differentiates RFHIC from other GaN amplifier manufacturers?
Samuel Cho:RFHIC has been within the RF & MW business for over 20 years, giving us extensive product breadth, RF & MW expertise, and manufacturing know-how. Also, with our world-class GaN transistors and power amplifiers, we can go further upstream to the system level, allowing us to expand our RF & MW expertise and product portfolio. RFHIC’s one-stop GaN solution business model will enable customers to get their GaN solutions, whether COTS or customized, all in one location, reducing overall capital expenses and significantly shortening project schedules to get to market faster.
Q. What market segments do you cater to? Which is the largest segment for you?
Samuel Cho:We cater to three key industries: Communication infrastructure components for telecommunications, power amplifiers, and high-power sub-systems for military/commercial radars and industrial, scientific, and medical (ISM) applications. Our telecom business is the most substantial portion of our revenue, but we foresee our defense and RF Energy business expanding significantly within the next couple of years.
Q. Who are your customers? Geographically, where are they located? What is the % break up by region?
Samuel Cho:Our customers for the telecom side of the business are Samsung, Huawei, Nokia, and Ericsson. For the defense front, we have top global defense and aerospace contractors such as Raytheon, Lockheed, L3Harris, Leonardo, Saab, Northrop Grumman, and much more. We have a very global and diverse customer portfolio within Europe, the US, China, and domestically. If I had to estimate, I would say that about 60% of our overall sales are overseas, and 40% are domestic.
Q. RFHIC has an extensive catalog of standard products. Do you also develop custom products for customers? What percentage of your business is Custom vs.? Standard Products?
Samuel Cho:RFHIC offers a broad range of commercial off-the-shelf (COTS) products and customizable products for our customers. RFHIC offers custom design solutions at unbeatable speeds (2-4 weeks), shortening customers’ project schedules. Therefore, getting products to market faster. Most of our key suppliers are within a 40 min distance from our production facility, enabling faster development time and lower costs.
80% of our products are customized, and 20% are COTS. But with that said, I believe our broad COTS solutions make us more capable of offering customized solutions. It shows potential customers our extensive expertise and capability in RF & MW applications. Our vast COTS portfolio offers our engineers a foundation so they aren’t starting from scratch, enabling our customers to market faster and meet their budget goals.
Q. What is your vision for RFHIC for the next 5 – 10 years?
Samuel Cho:I see us developing high-power products in the next five years with RFHIC’s GaN on Diamond technology. I foresee RFHIC’s Diamond technology to be heavily used for higher-power applications, especially within the defense side, and later towards the RF Energy market. I also envision us researching and developing products with various semiconductor materials like GaN on GaN and even Diamond on Diamond in the future. Lastly, I see RFHIC becoming the best GaN RF & Microwave device to sub-system manufacturers worldwide. I want people to remember RFHIC as the best one-stop GaN solution provider anytime they have a high-power RF & MW need.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable products worldwide.
Anyang, South Korea, January 9, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, will showcase its latest L, S, C, and X-band gallium nitride (GaN) power amplifiers and transmitters designed for weather and air traffic control radar applications at the World ATM Congress 2020, in Madrid, Spain, March 10th-March 12th, Booth #1384.
World ATM Congress is the world’s largest international air traffic management (ATM) exhibition and conference attracting over 9,500 registrants this year.
World ATM Congress is a Civil Air Navigation Services Organisation (CANSO) partnership with the Air Traffic Control Association (ATCA). We bring together the world’s leading product developers, experts, stakeholders, and air navigation service providers (ANSPs). Aviation thought leaders gather for three days of conference sessions, product demonstrations and launches, contract closures and educational and networking opportunities in Madrid, Spain. Get unparalleled insight into key issues in the ATM industry, hands-on experience of the latest products and innovation, and potential to increase brand awareness all in one place – save time and increase revenue. World ATM Congress delivers the context, content, and contacts that suppliers and customers need to shape the future of global airspace.
Meet with RFHIC’s team and learn how we can provide you with the best GaN solutions to your most challenging radar demands. Members of RFHIC’s engineering and sales teams will be available at Booth #1384 to answer questions.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
From the left, Kim Hyun-chul, vice chairman of the Korea IR Council, Chung Woon-soo, head of the KOSDAQ market division at the Korea Exchange, Han Ki-woo, chief executive officer of Metal Life, Jung Il-moon, chief executive officer of Korea Investment & Securities Co., and Song Yoon-jin, vice chairman of the KOSDAQ Association, are taking photos. (photo=Provided by the Korea Exchange) 2019.12.24. photo@newsis.com
Metal Life KOSDAQ Listed Ceremony
The KOSDAQ Market Headquarters of the Korea Exchange held a ceremony Monday morning to mark the new listing of Metal Life (KOSDAQ: 327260) on the Korean Exchange. Metal Life (KOSDAQ: 327260) is a South Korean company that designs and manufactures various photoelectric parts such as: butterfly packages, industrial laser modules, and ceramic packages. Metal-Life (KOSDAQ: 327260) is a daughter company of RFHIC Corporation.
DTAQ Provides $8.70M Funding for 29 Defense Companies
Jinju, South Korea, September 26, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave components for communications and defense applications.
DTAQ (Defense agency for Technology And Quality) HQ located in Kyeongnam Jinju held a ceremony for weapon system re-modeling business support agreement with 29 companies on the 25th of September. The weapon system re-modeling development is to reinforce R&D investments and strengthening the capabilities to export weapon systems.
Last year`s DTAQ funds were roughly $1.74M which have been aggressively increased to $17.40M for companies to secure oversea export competitiveness. With the current agreement, companies who have entered into this agreement will be subsidies with 75% of the whole business expense $8.70M for 3 years (mid-sized companies-60%, large-sized companies-50%). DTAQ gave SMEs and venture companies priority in their selection process to encourage more participation.
Also, DTAQ signed a “Global defense nurturing business agreement” with one of the companies. This agreement agrees to select high potential small medium-sized companies to grow competitively on a more global scale by providing material, components, equipment, test results, consulting, marketing and support in other needed services.
The fund amount for this year is appx. $2.26M (mid-sized company -60% large-sized company -50%) select companies can receive up to $1.83M in funding for up to 3 years.
“This agreement and financial support will greatly contribute to the potential boost for small and medium-sized enterprises within South Korea. This will allow the concentration of defense exports largely held by big corporations to shift more towards small to medium size companies,” stated Han Seung Jae, Director of DTAQ.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
Anyang, South Korea, February 12, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, today released its latest RTHx-series designed for 5G Massive MIMO and Small Cell applications. The RTHx-Series consists of both 5W and 10W GaN hybrid power amplifier operating in 3.4-3.6 GHz and 3.6-3.8 GHz frequency range. All four amplifiers provide a power-added efficiency of 43% and are 50 Ohms input and output matched. The devices do not require external components, unlike traditional hybrid power amplifiers, making it easier for system design.
To learn more, visit our website or contact one of our sales representatives today.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
RFHIC to Showcase GaN on Diamond Wafer and High-Powered GaN SSPA at EuMW 2018
Anyang, South Korea, September 18, 2018 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, will showcase its latest GaN solid-state power amplifiers, transmitters, and the world’s first GaN on Diamond wafer at this year’s European Microwave Conference in Madrid, Spain from September 25th – 28th, Booth #6. European Microwave Conference is the most significant event in Europe dedicated to a broad range of high frequency related topics, ranging from semiconductor materials, MMICs and microwave circuit design to radar, high speed, and mobile system applications.
Come stop by our booth to check out our latest product portfolio of GaN solutions for defense, communications, and ISM applications. We look forward to meeting you all there!
Members of RFHIC’s engineering and sales team will be available at our booth (#6) to answer any questions.
About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
