Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP0627200-53
Description
RFHIC’s RWP0627200-53 is a 200W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 600 to 2700 MHz and offers high reliability and ruggedness. The RWP2060080-50 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification
Aerospace & Defense
Military
Communications
EMI/RFHI
Specification
| Min Freq2. | 600MHz |
|---|---|
| Max Freq. | 2700MHz |
| Typ Output Power | 200W |
| Power Gain | 53dB |
| VDC | 36 |
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