Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RTP0809300-66
Description
RFHIC’s RTP0809300-66 is a 300W, gallium-nitride (GaN) Wideband Power amplifier designed for microwave heating, microwave drying, and microwave plasma generation. This gallium-nitride (GaN) wideband amplifier operates from 800 to 900 MHz and offers high reliability and ruggedness. The RTP0809300-66 is fabricated using RFHIC’s state-of-the-art gallium-nitride-on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification
Microwave Heating
Microwave Drying
Microwave Plasma
RF Sub-Systems
Specification
| Min Freq2. | 800MHz |
|---|---|
| Max Freq. | 900MHz |
| Typ Output Power | 300W |
| Power Gain | 66dB |
| PAE | 41% |
| VDC | 45 |
Related Products
RWP2060050-48 ›
RFHIC’s RWP2060050-48 is a gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable at 2 to 6 GHz and is 50 Ohms fully mat...
RWP2060080-50 ›
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitr...
RWP25020-50 ›
RFHIC’s RWP25020-50 is a gallium-nitride on silicon carbide (GaN-on-SiC), S-band, wideband amplifier suited for broadcasting and communication system a...
RWP0627200-53 ›
RFHIC’s RWP0627200-53 is a 200W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) w...
