Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP1214550-14
Description
RFHIC’s RRP1214550-14 is an L-band, 560W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP1214500-14 achieves 14dB of gain with an efficiency of 65%. The RRP1214550-14 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP1214550-14 achieves a duty of 20% and a pulse width of 200 us. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification
General Radar Systems
Specification
| Band | L-band |
|---|---|
| Min Freq2. | 1200MHz |
| Max Freq. | 1400MHz |
| Type | Pallet |
| Typ Output Power | 550W |
| Power Gain | 13.5dB |
| VDC | 50 |
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