Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE505
Description
RFHIC’s AE505 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV, repeater, and base station systems. Covering from 30 to 2650 MHz, the AE505 provides a high gain of 14 dB with 41.5 dBm OIP3 and 3.4 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode ( HEMT to provide low current draw and noise. The AE505 is packaged in a SOIC8 surface mount (SMD) type to lower overall product cost.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 2650MHz |
|---|---|
| Noise Figure | 3.4dB |
| VDC | 5 |
| Package | SOIC-8 |
| Min Freq2. | 30MHz |
Related Products
AE366 ›
RFHIC’s AE366 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed for global mobile communication systems (GSM) and...
AE367 ›
RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G c...
AE379 ›
RFHIC’s AE379 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC), designed ideally for RFID, and femtocell applications. Op...
AE368 ›
RFHIC’s AE368 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed ideally for satellite systems, RFID, and femtocel...