Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE312
Description
RFHIC’s AE312 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2700 MHz, the AE312 provides a high gain of 20 dB with 32 dBm OIP3 and 1 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs HEMT, providing lower current draw, noise, and linearity.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 2700MHz |
|---|---|
| Noise Figure | 1.0dB |
| VDC | 5 |
| Package | SOT-89 |
| Min Freq2. | 5MHz |
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