Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s AE608 is a gallium arsenide GaAs MESFET amplifier designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 10 to 4000 MHz, the AE608 provides 14 dBm of output power at P1dB with a gain of 14 dB and high OIP3 levels of 32 dBm. The AE608 is packaged in a plastic surface mount (SMD), lowering manufacturing costs.
View Product Specification| Max Freq. | 4000MHz |
|---|---|
| Noise Figure | 0.7dB |
| VDC | 3 |
| Package | SOT-89 |
| Min Freq2. | 10MHz |