Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AP209
Description
RFHIC’s AP209 is a gallium arsenide GaAs MESFET amplifier for global mobile communication systems (GSM) and code-division multiple 2G & 3G networks. Operating from 50 to 3500 MHz, the AP209 provides 24 dBm of output power at P1dB with a gain of 13.5 dB. The AP209 is packaged in a plastic surface mount (SMD).
View Product Specification
Code Division Multiple Access (CDMA)
Cellular Communications
2G & 3G Networks
CATV
Wideband Code Division Multiple Access (WCDMA)
Specification
| Max Freq. | 3500MHz |
|---|---|
| Noise Figure | 2.5dB |
| VDC | 9 |
| Package | SOT-89 |
| Min Freq2. | 50MHz |
Related Products
AD211 ›
RFHIC’s AD211 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) active divider designed for CATV applications such as...
AD274 ›
RFHIC’s AD274 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) active divider designed for multi-tuner set-top boxes...
AD311 ›
RFHIC’s AD311 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) active divider designed for multi-tuner set-top boxes...
AD412 ›
RFHIC’s AD412 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) active divider designed for CATV systems. The AD412 i...