Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s AE410 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 3000 MHz, the AE410 provides 20 dBm of output power at P1dB with a gain of 20 dB. The AE410 is packaged in a plastic surface mount (SMD) package.
View Product SpecificationMax Freq. | 3000MHz |
---|---|
Noise Figure | 2.3dB |
VDC | 5 |
Package | SOT-89 |
Min Freq2. | 30MHz |