Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE367
Description
RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G communication equipment. Operating from 50 to 3500 MHz, the AE367 provides 27 dBm of output power at P1dB with a gain of 15.5 dB. The AE367 is packaged in a plastic surface mount (SMD), lowering manufacturing costs.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 3500MHz |
|---|---|
| Noise Figure | 3.5dB |
| VDC | 5 |
| Package | SOT-89 |
| Min Freq2. | 50MHz |
Related Products
AE312 ›
RFHIC’s AE312 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON,...
AE367 ›
RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G c...
AE368 ›
RFHIC’s AE368 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed ideally for satellite systems, RFID, and femtocel...
AE308 ›
RFHIC’s AE308 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV, Satellite, and...