Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE366
Description
RFHIC’s AE366 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 2200 MHz, the AE366 provides 22 dBm of output power at P1dB with a gain of 22.5 dB. The AE366 is packaged in a plastic surface mount (SMD), resulting in lower manufacturing costs.
View Product Specification
Receiver Intermediate Frequency (IF) Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 2200MHz |
|---|---|
| Noise Figure | 1.6dB |
| VDC | 5 |
| Package | SOT-89 |
| Min Freq2. | 30MHz |
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