Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RIM132K0-20
Description
RFHIC’s RIM132K0-20 is a 2kW gallium-nitride solid-state power amplifier (GaN SSPA) designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. The RIM132K0-20 is built with RFHIC’s state-of-the-art GaN-on-SiC high-electron-mobility transistors (HEMT). The solid-state amplifier gives users 65% drain efficiency, operating from a 50V DC supply. The RIM132K0-20 is fully matched and provides excellent thermal stability. An ideal replacement for legacy tube-based systems, offering better reliability and longer lifetimes.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Linear Accelerator
Specification
| Max Freq. | 1305MHz |
|---|---|
| Output Power | 2000W |
| Efficiency | 65% |
| VDC | 49 |
| RF Input Connector | SMA, Female |
| RF Output Connector | 7/16 DIN, Female |
| Cooling | Water |
| Min Freq2. | 1295MHz |
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