Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFDGQ
Description
RFHIC’s RFDGQ is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3400 to 3700 MHz, the RFDGQ provides an output power of 15.8W with high efficiency of 45.5%. The RFDGQ is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDGQ is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 15.8W average power.To simplify system integration, the RFDGQ is fully matched to 50 ohms with integrated DC blocking caps on both RF ports. Custom designs are available upon request.
View Product Specification
5G NR system
4G/LTE system
Massive MIMO
Specification
| Max Freq. | 3700MHz |
|---|---|
| Typ Output Power | 15.8W |
| Saturation Power | 113W |
| Power Gain | 31.1dB |
| Efficiency | 46% |
| VDC | 48 |
| Package | PP-1S |
| Package Type | Surface Mount |
| Min Freq2. | 3400MHz |
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