Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFCGQ
Description
RFHIC’s RFCGQ is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 2496 to 2690 MHz, the RFCGQ provides an output power of 15.8W with high efficiency of 46.1%. The RFCGQ is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFCGQ is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 15.8W average power. To simplify system integration, the RFCGQ is fully matched to 50 ohms with integrated DC blocking caps on both RF ports. Custom designs are available upon request.
View Product Specification
5G NR system
4G/LTE system
Massive MIMO
Specification
| Max Freq. | 2690MHz |
|---|---|
| Typ Output Power | 15.8W |
| Saturation Power | 116.4W |
| Power Gain | 31dB |
| Efficiency | 46.1% |
| VDC | 48 |
| Package | PP-1S |
| Package Type | Surface Mount |
| Min Freq2. | 2496MHz |
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