Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFDGK
Description
RFHIC’s RFDGK is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3480 to 3680 MHz, the RFDFE provides an output power of 9.1W with high efficiency of 47.1%. The RFDGK is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDGK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 9.1W average power. To simplify system integration, the RFDGK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports.
View Product Specification
5G NR system
4G/LTE system
Massive MIMO
Specification
| Max Freq. | 3680MHz |
|---|---|
| Typ Output Power | 9.1W |
| Saturation Power | 87W |
| Power Gain | 32dB |
| Efficiency | 47.1% |
| VDC | 40 |
| Package | PP-1S |
| Package Type | Surface Mount |
| Min Freq2. | 3480MHz |
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