Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RT12055P
Description
RFHIC’s RT12055P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz. The RT12055P delivers 60 W of saturated power at 48V. The device is a single-stage internally matched power amplifier transistor packaged in our NS-CS01 ceramic package. The RT12055P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 6000MHz |
|---|---|
| Typ Output Power | 13W |
| Saturation Power | 60W |
| Power Gain | 16dB |
| Efficiency | 34% |
| VDC | 47 |
| Package | NS-CS01 |
| Package Type | Flange |
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