Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
LCL3322-L
Description
RFHIC’s LCL3322-L is an LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting a noise figure of 1.4dB and OIP3 levels of 39 dBm. The LCL3322-L is packaged in a hybrid surface mount and requires no matching circuit. This device has a high maximum input power of 18 dBm, and a single supply voltage of 5 V is required. The LCL3322-L’s high performance and handling ease make it ideal for WiMAX, LTE, and radar applications.
View Product Specification
2G & 3G Repeater
Base Station
RF Sub-Systems
WiMAX
GSM, DCS, UMTS
Specification
| Min Freq2. | 2700MHz |
|---|---|
| Max Freq. | 3800MHz |
| Typ Output P1dB | 27dBm |
| Noise Figure | 1.4dB |
| Power Gain | 21dB |
| VDC | 5 |
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