Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s CL2102D-L is an LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting a noise figure of 0.7dB and OIP3 levels of 33 dBm.The CL2102D-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 30 dBm, and a single supply voltage of 5 V is required. The CL2102D-L’s high performance and handling ease make it ideal for WiMAX and LTE applications.
View Product SpecificationMin Freq2. | 1750MHz |
---|---|
Max Freq. | 2600MHz |
Saturation Power | 20W |
Noise Figure | 0.7dB |
Power Gain | 14.5dB |
VDC | 5 |