Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s CL1302D-L is a low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs
p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of small signal gain and P1dB of 20dBm, while supporting a noise figure of 0.7dB and OIP3 levels of 33 dBm.The CL1302D-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 30 dBm, and a single supply voltage of 5 V is required. The CL1302D-L’s high performance and handling ease make it ideal for WiMAX and LTE applications.
Min Freq2. | 1200MHz |
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Max Freq. | 1400MHz |
Typ Output P1dB | 20dBm |
Noise Figure | 0.7dB |
Power Gain | 18dB |
VDC | 5 |