Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
TG520-10
Description
RFHIC’s TG520-10 is a gallium-nitride (GaN) hybrid power amplifier for defense communications and electronic warfare system applications. Covering from 30 to 520 MHz, the TG520-10 yields a high gain of 16 dB with 60 % efficiency at P3dB. The TG520-10 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.
View Product Specification
Radio System
Trunked Radio System
RF Sub-Systems
Base Station
Specification
| Min Freq2. | 30MHz |
|---|---|
| Max Freq. | 520MHz |
| Saturation Power | 10W |
| Power Gain | 16dB |
| VDC | 28 |
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