Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
HM0005-10A
Description
RFHIC’s HM0005-10A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio systems, wideband receivers, and EW jammer applications. Covering from 20 to 520 MHz, the HM0005-10A yields a high gain of 30 dB with 45% efficiency at P3dB. The HM0005-10A is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a low-cost hybrid surface mount (SMD) for high breakdown voltage and efficiency. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.
View Product Specification
Radio System
Military Radio
Wideband Receiver
Jammer
Specification
| Min Freq2. | 20MHz |
|---|---|
| Max Freq. | 520MHz |
| Power Gain | 30dB |
| VDC | 28 |
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