Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RSP4459030-17A
Description
The RSP4459030-17A is designed for communication system application frequencies from C-band, 4.4 ~ 5.9 GHz. This module uses gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing high breakdown voltage, wide bandwidth, and high efficiency.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 4400MHz |
|---|---|
| Max Freq. | 5900MHz |
| Type | Pallet |
| Typ Output Power | 31W |
| Power Gain | 13dB |
| PAE | 30% |
| VDC | 40 |
Related Products
RWP03040-10 ›
RFHIC’s RWP03040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP05020-10 ›
RFHIC’s RWP05020-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP05040-10 ›
RFHIC’s RWP05040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP06040-10 ›
RFHIC’s RWP06040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
