Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP19040-50
Description
RFHIC’s RNP19040-50 is a gallium-nitride on silicon carbide (GaN-on-SiC), L-band, narrow band high power amplifier suited for general-purpose applications. Covering from 1800 to 1900 MHz, the RNP19040-50 yields a small signal gain of 33 dB with 47.5 dBm at P3dB peak. The RNP19040-50 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 1800MHz |
|---|---|
| Max Freq. | 1900MHz |
| Type | Pallet |
| Typ Output Power | 50W |
| Power Gain | 33dB |
| VDC | 28 |
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