Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP15020-50
Description
RFHIC’s RWP15020-50 is a 20W gallium-nitride on silicon carbide (GaN-on-SiC), L-band wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a small signal gain of 29 dB with 43 dBm at P3dB. The RWP15020-50 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 1000MHz |
|---|---|
| Max Freq. | 2000MHz |
| Type | Pallet |
| Typ Output Power | 20W |
| Power Gain | 29dB |
| VDC | 28 |
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