Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP17050-10
Description
RFHIC’s RWP17050-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP17050-10 yields a small signal gain of 37 dB with 47 dBm at Pin 10 dBm.The RWP17050-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 700MHz |
|---|---|
| Max Freq. | 2700MHz |
| Type | Pallet |
| Typ Output Power | 50W |
| Power Gain | 37dB |
| VDC | 32 |
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