Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP03160-10
Description
RFHIC’s RWP03160-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a small signal gain of 43 dB with 54 dBm at OIP3. The RWP03160-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Military Communications
Specification
| Min Freq2. | 20MHz |
|---|---|
| Max Freq. | 500MHz |
| Type | Pallet |
| Typ Output Power | 159W |
| Power Gain | 43dB |
| VDC | 28 |
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