Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP162168100-08A is a 100 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168100-08A achieves 8 dB of gain with an efficiency of 20%. The RRP162168100-08A utilizes our in-house gallium-nitride-on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, bandwidth, and efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | Ku-band |
|---|---|
| Min Freq2. | 16200MHz |
| Max Freq. | 16800MHz |
| Type | Module |
| Typ Output Power | 100W |
| Power Gain | 8dB |
| PAE | 20% |
| VDC | 50 |