Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP52571K0-41 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP52571K0-41 achieves 41 dB of gain with an efficiency of 30%. The RRP52571K0-41 utilizes our in-house gallium-nitride on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, bandwidth, and efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | C-band |
|---|---|
| Min Freq2. | 5250MHz |
| Max Freq. | 5750MHz |
| Type | Module |
| Typ Output Power | 1200W |
| Power Gain | 41dB |
| PAE | 30% |
| VDC | 50 |