Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP291K0-10 is an 1100 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from S-band, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency of 35%. The RRP291K0-10 utilizes our in-house gallium-nitride-on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | S-band |
|---|---|
| Min Freq2. | 2700MHz |
| Max Freq. | 3100MHz |
| Type | Module |
| Typ Output Power | 1100W |
| Power Gain | 61dB |
| PAE | 35% |
| VDC | 50 |