Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP131K0-10 is a 1200 W, L-band gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP131K0-10 achieves 54 dB of gain with an efficiency of 50%. The RRP131K0-10 utilizes our in-house gallium-nitride-on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | L-band |
|---|---|
| Min Freq2. | 1200MHz |
| Max Freq. | 1400MHz |
| Type | Module |
| Typ Output Power | 1200W |
| Power Gain | 54dB |
| PAE | 50% |
| VDC | 50 |