Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s RRP03250-10 is a 300 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 135 to 460 MHz, the RRP03250-10 achieves 31 dB of gain with an efficiency of 45%. The RRP03250-10 utilizes our in-house gallium-nitride on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
View Product SpecificationMin Freq2. | 135MHz |
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Max Freq. | 460MHz |
Type | Module |
Typ Output Power | 300W |
Power Gain | 31dB |
PAE | 40% |
VDC | 50 |