Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s RRP2731080-39 is an S-band, 100W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP2731080-39 achieves 39dB of gain with an efficiency of 42%. The RRP2731080-39 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP2731080-39 achieves a duty of 20% and a pulse width of 500 us. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product SpecificationBand | S-band |
---|---|
Min Freq2. | 2700MHz |
Max Freq. | 3100MHz |
Type | Pallet |
Typ Output Power | 100W |
Power Gain | 39dB |
PAE | 42% |
VDC | 50 |