Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP10113K0-30 is a 3.5kW, pulsed GaN solid-state power amplifier operable from 1000 to 1100 MHz ( L-band). The RRP10113K0-30 serve as a cost-effective replacement for traveling wave tube (TWT) amplifiers and offers longer life, better efficiencies, and reduced size and weight than their TWT counterparts.RFHIC’s RRP10113K0-30 is fabricated using RFHIC’s state-of-the-art gallium nitride (GaN) technology, providing higher breakdown voltage and optimal efficiency.
View Product Specification| Band | L-band |
|---|---|
| Min Freq2. | 1000MHz |
| Max Freq. | 1100MHz |
| Type | Pallet |
| Typ Output Power | 3500W |
| Power Gain | 31dB |
| PAE | 60% |
| VDC | 50 |