Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID38601D
Description
RFHIC’s ID38601D is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 3980 MHz.Delivering 600 W of saturated power at 48V, the ID38601D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.
View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
Macro Base Stations
Specification
| Max Freq. | 3980MHz |
|---|---|
| Typ Output Power | 81.2W |
| Saturation Power | 600W |
| Power Gain | 14.3dB |
| Efficiency | 42% |
| VDC | 48 |
| Package | RF24009DKR3 |
| Package Type | Flange |
| Min Freq2. | 3700MHz |
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