Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID22601D
Description
RFHIC’s ID22601D is a discrete gallium nitride on silicon carbide (GaN-onSiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz.Delivering 530 W of saturated power at 48V, the ID22601D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.
View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2200MHz |
|---|---|
| Typ Output Power | 76W |
| Saturation Power | 530W |
| Power Gain | 15.1dB |
| Efficiency | 47% |
| VDC | 48 |
| Package | RF24009DKR3 |
| Package Type | Flange |
| Min Freq2. | 2110MHz |
Related Products
ID20411D ›
RFHIC’s ID20411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 2200 MHz ...
ID26411D ›
RFHIC’s ID26411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2570 to 2620 MHz....
ID26601D ›
RFHIC’s ID26601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz....
ID22411D ›
RFHIC’s ID22411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz....
