Wireless Infrastructure

Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RF Energy

The world runs on power, and we see a future where the world can do much more with less with RFHIC's gallium nitride (GaN) solid state microwave solutions

Defense & Aerospace

Elevate the performance of your Defense & Aerospace systems with RFHIC's field-proven gallium nitride (GaN) solid-state RF & Microwave devices

Company

RFHIC is a global leader in providing radio frequency (RF) & microwave (MW) solutions utilizing gallium nitride (GaN) for wireless infrastructure, commercial and military radar, and RF energy applications

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Products IE21110P

IE21110P

Production

Description

RFHIC’s IE21110P is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency of 74% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our NS-AS01 ceramic package. The IE21110P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM

Multi-Band, Multi-Mode

Multi-Carrier

High Efficiency, Doherty Amplifier

Specification

Typ Output Power	25W
VDC	48
Package	NS-AS01
Package Type	Flange