Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE23195WD
Description
RFHIC’s IE23195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 220 W of saturated power at 48V with a drain efficiency of 56% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12001DR3 ceramic package. The IE23195WD can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2400MHz |
|---|---|
| Typ Output Power | 40W |
| Saturation Power | 220W |
| Power Gain | 15.3dB |
| Efficiency | 56% |
| VDC | 48 |
| Package | RF12001DKR3 |
| Package Type | Flange |
| Min Freq2. | 2300MHz |
Related Products
IE23195WD ›
RFHIC’s IE23195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2300 to 24...
IE21110P ›
RFHIC’s IE21110P is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The I...
IE21085P ›
RFHIC’s IE21085P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 217...
IE21220P ›
RFHIC’s IE21220P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 217...
