Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE36170WD
Description
RFHIC’s IE36170WD is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency of 48% at 45 dBm.The IE36170WD is designed to provide users with easier system integration. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 3560MHz |
|---|---|
| Typ Output Power | 32W |
| Saturation Power | 170W |
| Power Gain | 15dB |
| Efficiency | 48% |
| VDC | 48 |
| Package | RF12001DKR3 |
| Package Type | Flange |
| Min Freq2. | 3520MHz |
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